Insulated gate bipolar transistor (IGBT) is a device exhibiting high input impedance and large bipolar current-carrying capability used in applications such as electronics, three-phase drives, power supplies (UPS), and other power circuits requiring high switch repetition rates. IGBT combines the insulated gate technology of the MOSFET with the output performance capabilities of a conventional bipolar transistor. The global insulated gate bipolar transistor market is expected to deliver a CAGR of 12.5 % during the review period of 2016 to 2023.
The market is enduring an exacting period with its robust growth coming to an abrupt halt in light of the COVID-19 pandemic. MRFR report on market highlights the future prediction and the growth alternatives that can be created.
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Growing demand for insulated gate bipolar transistor market (IGBT) owing to prospering end user applications such as electronics, power supplies, variable-frequency drives (VFDs), electric automobiles, trains, variable speed refrigerators and air-conditioners and others is the critical driver of the market.
The advantages of IGBT Transistor such as output switching, low on-state voltage drop due to conductivity modulation, superior on-state current density, combination of characteristics of bipolar transistor with MOSFET such as greater power gain as compared to standard bipolar type transistor, higher voltage operation and lower input losses as compared to MOSFET and others make it suitable for power electronics manufacturing. The smaller chip size benefit offered by the IGBT makes it attractive in manufacturing of miniaturized electronics a trend that shows no sign of halting. The lower on-state resistance and conduction losses coupled with ability to switch high voltages at high frequencies without damage makes the insulated gate bipolar transistor ideal for manufacturing high inductive loads devices such as coil windings, electromagnets, and DC motors.
Increasing demand for electric vehicle is expected to be the fastest application of IGBT. The demand for high voltage operating devices in energy & power, automotive, and consumer electronics industries is expected to further charge the market.
Higher current leakage especially at higher temperatures is the critical technical restraint on the market for insulated gate bipolar transistor (IGBT). The growing fragmentation of the electronics industry, growing stringency of environmental and manufacturing regulations especially Resource Conservation and Recovery Act, Chemicals under the Toxic Substances Control Act (TSCA) and others are restraints on the market. The monopoly of China on rare earths production is a critical threat to the market.
To generate an accurate assessment of the market the report on Insulated Gate Bipolar Transistor (IGBT) Market Covid 19 is segmented by type, power rating, application, and region.
Type – discrete IGBT and IGBT module.
Power rating – low power, medium power, and high power applications.
Regions – North America, Europe, Asia Pacific, Middle East and Africa
Asia-Pacific accounted for the largest share of the global market for IGBT led by emergence of China, South Korea, Japan, Taiwan and others as large industrial bases for manufacturing of electronics. The burgeoning demand for electronics have made Asia-Pacific to be also the fastest region for the market. The initiatives of many Asian Governments such as India to establish HVDC and smart grids are the critical drivers of the IGBT market in this region as IGBT are essential for ensuring efficient control of high voltage. Further development of metros projects in nations like China and India coupled with financial support for these projects are propelling the market.
Europe is expected to account for the second largest share of the global IGBT market owing to presence of major players in the regions and high investments in rail projects. North America is expected to account for the third position followed by Middle East and Africa.
Some of the majopr players in the market of IGBT are Toshiba Corporation (Japan), Renesas Electronics Corporation (Japan), Fuji Electric Co. Ltd (Japan), ROHM Co. Ltd. (Japan), ABB Ltd. (Switzerland), Hitachi Ltd. (Japan), SEMIKRON International GmbH (Germany), NXP Semiconductors N.V (the Netherland), Mitsubishi Electric Corporation (Japan), STMicroelectronics N.V. (Switzerland) ON Semiconductor (U.S.), Infineon Technologies AG (Germany), and others.
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